Scientists Develop Transistor Models Useful For Space And Defence Applications
Kolkata, Dec 30: Indian researchers have developed a high performance industry-standard transistor model which can be used to make high-power Radio Frequency (RF) circuits owing to its high breakdown voltage.
Radio Frequency circuits include amplifiers and switches, which are used in wireless transmission and are useful for space and defense applications.
The Aluminium gallium nitride High Electron Mobility Transistors (HEMTs) have simple design procedures and can extend the power level of solid-state microwave circuits by a factor of five to ten.
This results in an appreciable reduction in the overall chip size and cost, the standard developed can significantly reduce the development cost of the circuits and devices for transmitting high-frequency signals, according to the team of researchers led by Prof. Yogesh Singh Chauhan at IIT Kanpur.
The technology has two excellent properties – high mobility and high-power performance. These properties reduce the noise figure and complexity while designing Low Noise Amplifiers (LNAs) – used in wireless transmission like mobile phones, base stations) while increasing the achievable bandwidth.
Aluminium gallium nitride High Electron Mobility Transistors have become the technology of choice for high-frequency and high-power applications like 5G, radars, base stations, satellite communications, etc.
The research team developed and standardized a physics-based compact model for Aluminium gallium nitride High Electron Mobility Transistors.
Prof. Chauhan’s team measures the current, capacitance, and RF characteristics of the devices under test and uses parameter extraction tools to extract the parameters of the ASM-HEMT model for a given technology.
Once the model behavior is in close agreement with the measured characteristics, the model is validated for practical applications.
